Intern

About the Role

As an intern in the Advanced DRAM Device & Cell Technology team at Micron's Boise R&D site, you will contribute to the development and characterization of future DRAM cell and access device technologies. This role combines semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision-making. You will collaborate with multidisciplinary engineering teams to improve cell performance, density, retention, reliability, and manufacturability.

Key Responsibilities

• Support the evaluation of DRAM access devices, capacitors, and cell stack elements through characterization, data analysis, and assessment of new device architectures, materials systems, and integration schemes.
• Design and implement silicon experiments; perform electrical, physical, and materials characterization along with statistical analysis to find opportunities for device, process, and design improvements.
• Analyze device- and array-level behavior including sensing margins, activation characteristics, disturb mechanisms, retention performance, leakage behavior, and read/write operation interactions.
• Collaborate with modeling, design, process integration, and manufacturing teams to understand device behavior, support technology optimization, and contribute to technology development activities.
• Apply AI-Assisted and Generative AI tools, where appropriate, to enhance data analysis, workflow efficiency, and technical decision-making.

Requirements & Tech Stack

• Currently pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a related technical field.
• Must not graduate prior to September 2027.
• Demonstrated understanding of semiconductor fundamentals, including device physics, materials science, characterization techniques, and concepts relevant to advanced memory technologies.
• Experience with electrical characterization, device testing, statistical analysis, and interpretation of experimental or simulation data sets.
• Familiarity with DRAM operational concepts, including activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar platforms.
• Familiarity with AI-assisted engineering and data analysis tools.

Preferred Qualifications

• Experience in DRAM or NAND device development, characterization, or technology research.
• Hands-on experience with semiconductor materials characterization, process development, thin film engineering, interface engineering, TCAD simulation, and/or advanced memory technology research.
• Knowledge of semiconductor fabrication processes, advanced BEOL integration, reliability mechanisms, and device variation analysis.
• Experience conducting independent research projects and effectively communicating technical results to diverse audiences.
• Experience using AI, Large Language Models (LLMs), AI-enabled analytics, or AI-supported engineering workflows to improve research productivity and technical insights.