Associate III, VLSI MCD ST
UST
About the Role
Associate III - VLSI MCD ST
Key Responsibilities
- Bitcell Design
- Design of simpler memory blocks (decoding, rowdec, SA, IO block w/o RA, WA)
- Design of complex blocks like RA, WA, Rd selftime and write selftime
- SPRAM/Dual Port/ROM architecture
- Sense Amp Analysis (offset, pulse width, glitch, coupling etc.)
- Read/Write Selftime Analysis
- Functional/Power Marginality analysis
- Latch analysis
- ESPCV
- Power ON and power sequencing checks
- Extraction, IR/EM analysis, PERC etc. – Nice to have
- Timing, power, leak etc. setups (definitions, stimuli, MCF etc.)
- Timing, power, leak etc. verification (new addition)
- LVF analysis and implementation
- Critical Path Tight Stimuli (CPTS)
- Full Cut Tight Stimuli (FCTS)
- FC power, timing, power, leak and comparison with CP
- Decoupling CAP Ageing (char)
Requirements & Tech Stack
- Calibre
- Capacitor Aging Analysis
- Critical Path Tight Stimuli
- Dual-Port Memory
- Functional Marginality Analysis
- Leakage Analysis
- Parasitic Extraction
- Physical Design




